Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared

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Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared

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Title: Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared
Author: Zhang, Huiliang; Aharonovich, Igor; Glenn, David R.; Schalek, Richard L.; Magyar, Andrew; Lichtman, Jeff; Hu, Evelyn; Walsworth, Ronald Lee

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Citation: Zhang, Huiliang, Igor Aharonovich, David R. Glenn, Richard Schalek, Andrew P. Magyar, Jeff W. Lichtman, Evelyn L. Hu, and Ronald L. Walsworth. 2014. “Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared.” Small 10 (10) (March 4): 1908–1913. doi:10.1002/smll.201303582.
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Abstract: Nanodiamonds doped with silicon-vacancy (Si-V) color centers are shown to be a promising candidate for cathodoluminescence (CL) imaging at the nanoscale, providing bright, non-bleaching, narrow-linewidth emission at wavelengths within the near-IR window of biological tissue. CL emission intensity from negative charge-state Si-V centers is greatly enhanced by increasing the nitrogen concentration during nanodiamond growth.
Published Version: doi:10.1002/smll.201303582
Other Sources: http://arxiv.org/pdf/1309.5169.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:32097105
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