Advanced atomic layer deposition and epitaxy processes

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Advanced atomic layer deposition and epitaxy processes

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Title: Advanced atomic layer deposition and epitaxy processes
Author: Gordon, Roy Gerald; Lou, Xiabing; Kim, Sang Bok

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Citation: Gordon, Roy G., Xiabing Lou Wang, Sang Bok Kim. 2015. Advanced Atomic Layer Deposition and Epitaxy Processes. 2015. In the Proceedings of the International Symposium on VLSI Technology, Systems and Applications. Hsinchu, Taiwan, April 27-29, 2015.
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Abstract: Atomic Layer Deposition (ALD) was used to grow single-crystalline epitaxial layers of high-k dielectric oxides on semiconductors with remarkably few defects or traps at the interfaces. La2O3 on GaAs(111) produced record-breaking transistors with both n-and p-channels, and CMOS circuits entirely in GaAs, including inverters, logic circuits and 5-stage ring oscillators. More conventionally oriented GaAs(100) substrates with etched (111) slopes also produced working transistors. ALD also grew single-crystalline epitaxial La2O3 films on Ge(111), and (Ca, Mg)O films on GaN(0001) substrates with high-quality epitaxial interfaces. These processes can be run in commercial ALD reactors using precursors produced by the Dow Chemical Company.
Published Version: doi:10.1109/VLSI-TSA.2015.7117593
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:32186504
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