Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness

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Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness

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Title: Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness
Author: Yang, Jing; Feng, Jun; Li, Kecheng; Bhandari, Harish; Li, Zhefeng; Gordon, Roy Gerald

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Citation: Yang, Jing, Jun Feng, Kecheng Li, Harish B. Bhandari, Zhefeng Li, and Roy G. Gordon. 2017. “Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness.” ECS Journal of Solid State Science and Technology 6 (5): P345–P349. doi:10.1149/2.0271705jss.
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Abstract: The formation of smooth, conformal cobalt disilicide (CoSi2) without facets or voids is critical for microelectronic device reliability owing to the ultra-shallow contact areas. Here we demonstrate the formation of smooth and conformal CoSi2 films by chemical vapor deposition (CVD) of cobalt nitride (CoxN) films on silicon (Si) or on silicon on insulator (SOI) substrates, followed by in-situ rapid thermal annealing (RTA) at 700°C. To reveal the CoSi2/Si interfacial morphology, we report a back-to-front sample preparation method, in which mechanical polishing, anisotropic tetramethylammonium hydroxide (TMAH) wet etching, hydrofluoric acid (HF) wet etching, and isotropic xenon difluoride (XeF2) dry etching are employed to remove the SOI substrate from the back side to expose the CoSi2/Si interface. This method offers a robust and reliable procedure for quantitative assessment of the CoSi2/Si interfacial roughness, as well as analytical support for advanced fabrication process development.
Published Version: 10.1149/2.0271705jss
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:32696198
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