Crystal Growth and Solute Trapping

View/ Open
Author
Published Version
http://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980&SID=1Metadata
Show full item recordCitation
Aziz, Michael J. Crystal Growth and Solute Trapping. 1984. Materials Research Society Symposium Proceedings 23: 369-374.Abstract
A simple model for solute trapping during rapid solidification is presented in terms of a single unknown parameters, the interfacial diffusivity Di. A transition from equilibrium segregation to complete solute trapping occurs over roughly an order of magnitude in growth speed, as the interface speed surpasses the maximum speed with which solute atoms can diffuse across the interface to remain ahead of the growing crystal. This diffusive speed is given by Di/Lambda, where Lambda is the interatomic spacing, and is typically of the order 10 meters per second. Comparison is made with experiment. The steady-state speed of a planar interface is predicted by calculating the free energy dissipated by irreversible processes at the interface and equating it to the available driving free energy. Steady-state solutions are presented for Bi-doped Si during pulsed laser annealing.Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAACitable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:3306021
Collections
- FAS Scholarly Articles [17845]
Contact administrator regarding this item (to report mistakes or request changes)