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dc.contributor.authorAziz, Michael J.
dc.date.accessioned2009-09-22T14:20:20Z
dc.date.issued1984
dc.identifier.citationAziz, Michael J. Crystal Growth and Solute Trapping. 1984. Materials Research Society Symposium Proceedings 23: 369-374.en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3306021
dc.description.abstractA simple model for solute trapping during rapid solidification is presented in terms of a single unknown parameters, the interfacial diffusivity D<sub>i</sub>. A transition from equilibrium segregation to complete solute trapping occurs over roughly an order of magnitude in growth speed, as the interface speed surpasses the maximum speed with which solute atoms can diffuse across the interface to remain ahead of the growing crystal. This diffusive speed is given by D<sub>i</sub>/Lambda, where Lambda is the interatomic spacing, and is typically of the order 10 meters per second. Comparison is made with experiment. The steady-state speed of a planar interface is predicted by calculating the free energy dissipated by irreversible processes at the interface and equating it to the available driving free energy. Steady-state solutions are presented for Bi-doped Si during pulsed laser annealing.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherMaterials Research Societyen_US
dc.relation.isversionofhttp://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980&SID=1en_US
dc.relation.hasversionhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja004.pdfen_US
dash.licenseLAA
dc.titleCrystal Growth and Solute Trappingen_US
dc.typeJournal Articleen_US
dc.description.versionAccepted Manuscripten_US
dc.relation.journalMaterials Research Society Symposium Proceedingsen_US
dash.depositing.authorAziz, Michael J.
dc.date.available2009-09-22T14:20:20Z
dash.contributor.affiliatedAziz, Michael


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