GaAs/Al[sub 0.15]Ga[sub 0.85]As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K
Adams, Robert W.
Wang, Qi Jie
Khanna, Suraj P.
Davies, A. Giles
Linfield, Edmund H.
Belkin, Mikhail A.
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CitationAdams, Robert W., Karun Vijayraghavan, Qi Jie Wang, Jonathan Fan, Federico Capasso, Suraj P. Khanna, A. Giles Davies, Edmund H. Linfield, and Mikhail A. Belkin. 2010. “GaAs/Al[sub 0.15]Ga[sub 0.85]As Terahertz Quantum Cascade Lasers with Double-Phonon Resonant Depopulation Operating up to 172 K.” Applied Physics Letters 97 (13): 131111. doi:10.1063/1.3496035.
AbstractWe report the design and performance of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation and a vertical lasing transition. Devices were processed into gold-clad double-metal waveguides. Lasing at 3 THz was observed up to a heat-sink temperature of 172 K, which compares favorably with the performance of single-phonon resonant depopulation devices based on vertical lasing transitions. These results demonstrate that terahertz quantum cascade lasers based on double-phonon depopulation designs may be a viable alternative to single-phonon depopulation designs for achieving high-temperature operation.
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