Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography

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Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography

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Title: Pure and conformal CVD nickel and nickel monosilicide in high-aspect-ratio structures analyzed by atom probe tomography
Author: Li, Kecheng; Feng, Jun; Kwak, Junkeun; Yang, Jing; Gordon, Roy Gerald

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Citation: Li, Kecheng, Jun Feng, Junkeun Kwak, Jing Yang, and Roy G. Gordon. 2017. “Pure and Conformal CVD Nickel and Nickel Monosilicide in High-Aspect-Ratio Structures Analyzed by Atom Probe Tomography.” Journal of Applied Physics 121 (17) (May 2): 175301. doi:10.1063/1.4982670.
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Abstract: Low-resistance and uniform contacts are needed for modern 3-D silicon transistors. The formation of high-quality and conformal nickel silicide at the interface between silicon and metal contacts is a possible solution. Direct-liquid-evaporation chemical vapor deposition is used to deposit nickel films conformally inside narrow silicon trenches. The deposited Ni is then reacted with a silicon substrate to form nickel monosilicide. Atom probe tomography (APT) is used to find and count the atoms in nanoscale regions inside these 3-D structures. APT shows that these NiSi films are stoichiometrically pure, single-phase, and conformal even inside trenches with high aspect ratios. The APT technique measures all impurities, including carbon, nitrogen, and oxygen, to have concentrations less than 0.1 at. %.
Published Version: 10.1063/1.4982670
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:33444600
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