Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires
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CitationBrovman, Yuri M., Joshua P. Small, Yongjie Hu, Ying Fang, Charles M. Lieber, and Philip Kim. 2016. “Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/silicon Nanowires.” Journal of Applied Physics 119 (23) (June 21): 234304. doi:10.1063/1.4953818.
AbstractWe have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes, respectively. At room temperature, peak TEP value of ∼300μ∼300 μV/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values is used to estimate the carrier doping of Si nanowires.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:33464214
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