Chemical Vapor Deposition (CVD) of Manganese Self-Aligned Diffusion Barriers for Cu Interconnections in Microelectronics
Lee, Don K
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CitationGordon, Roy G., Hoon Kim, Yeung Au, Hongtao Wang, Harish B. Bhandari, Yiqun Liu, Don K. Lee and Youbo Lin. 2009. Chemical vapor deposition (CVD) of manganese self-aligned diffusion barriers for Cu interconnections in microelectronics. In Advanced Metallization Conference 2008 (AMC 2008): Proceedings of the conference: September 23-25, 2008, San Diego, California, U.S.A. and October 8-10, 2008, at the University of Tokyo, Tokyo, Japan. Materials Research Society conference proceedings. Warrendale, Pa: Materials Research Society.
AbstractBarriers to prevent diffusion of copper, oxygen and water vapor were formed by CVD using a manganese precursor vapor that reacts with silica surfaces. The manganese metal penetrates only a few nanometers into the silica to make conformal amorphous manganese silicate layers. This MnSixOy was found to be an excellent barrier to the diffusion of Cu, O2 and H2O vapor. The adhesion strength of Cu to the MnSixOy was found to be sufficiently strong to satisfy the semiconductor industry requirements for interconnections in future microelectronic devices. CVD Mn dissolves into copper surfaces and then diffuses to increase adhesion to SiCNO capping layers.
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