Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor
Ulfig, Robert M.
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CitationWang, Hongtao, Roy G. Gordon, Roger Alvis, and Robert M. Ulfig. Forthcoming. Atomic layer deposition of ruthenium thin films from an amidinate precursor. Chemical Vapor Deposition.
AbstractRuthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense
and pure thin films can be deposited when oxygen exposure EO approaches a certain threshold ( Emax ). When EO > Emax, the film peels off due to the recombinative desorption of O2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5 at.%) is segregated near the grain boundaries. The atom probe
microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3347576
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