Show simple item record

dc.contributor.authorLiu, Yiqun
dc.contributor.authorKim, Hoon
dc.contributor.authorWang, Jun-Jieh
dc.contributor.authorLi, Huazhi
dc.contributor.authorGordon, Roy Gerald
dc.date.accessioned2009-10-22T14:17:23Z
dc.date.issued2008
dc.identifier.citationLiu, Yiqun, Hoon Kim, Jun-Jieh Wang, Huazhi Li, and Roy G. Gordon. 2008. Effects of low temperature O2 treatment on the electrical characteristics of amorphous LaAlO3 films by atomic layer deposition. Physics and Technology of High-k Gate Dielectrics. Special Issue, ECS Transactions 16, no. 5: 471-478.en_US
dc.identifier.isbn9781607680048en_US
dc.identifier.isbn1607680041en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3353948
dc.description.abstractAmorphous LaAlO3 films were deposited on hydrogen-terminated silicon substrates by atomic layer deposition (ALD) at 300 oC. The precursors were lanthanum tris(N,N'-diisopropylformamidinate), trimethylaluminum (TMA) and water. Capacitance-voltage measurements made on ALD MoN/LaAlO3/Si stacks showed humps especially at low frequencies. They were effectively removed by O2 treatment at 300 o C without affecting the dielectric constant (kappa~15). The O2 treatment can be carried out either after deposition of a LaAlO3 film, or after each ALD cycle. The O2 treatment also lowered the leakage current from 80 mA cm-2 to 1 mA cm-2 for EOT = 1.3 nm. This indicates that oxygen vacancies are the main defects in as-deposited LaAlO3. Oxygen treated LaAlO3 is one of the best candidates for future high-kappa dielectric material due to its low leakage, low defect density and abrupt interface with silicon.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.publisherElectrochemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1149/1.2981628en_US
dc.relation.hasversionhttp://www.chem.harvard.edu/groups/gordon/publicationsearch.htmlen_US
dash.licenseLAA
dc.titleEffects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Depositionen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalECS Transactionsen_US
dash.depositing.authorGordon, Roy Gerald
dc.date.available2009-10-22T14:17:23Z
dc.identifier.doi10.1149/1.2981628*
dash.contributor.affiliatedLiu, Yiqun
dash.contributor.affiliatedGordon, Roy


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record