Coherent Optical Transitions in Implanted Nitrogen Vacancy Centers

 
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Author
Chu, Y.
Shields, B.J.
Hausmann, B.
Evans, R.
Togan, E.
Markham, M.
Stacey, A.
Twitchen, D.J.
Park, H.
Maletinsky, P.
Note: Order does not necessarily reflect citation order of authors.
Published Version
https://doi.org/10.1021/nl404836p
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Citation
Chu, Y., N.P. de Leon, B.J. Shields, B. Hausmann, R. Evans, E. Togan, M. J. Burek, et al. 2014. “Coherent Optical Transitions in Implanted Nitrogen Vacancy Centers.” Nano Letters 14 (4) (April 9): 1982–1986. doi:10.1021/nl404836p.
Abstract
We report the observation of stable optical transitions in nitrogen-vacancy (NV) centers created by ion implantation. Using a combination of high temperature annealing and subsequent surface treatment, we reproducibly create NV centers with zero-phonon lines (ZPL) exhibiting spectral diffusion that is close to the lifetime-limited optical line width. The residual spectral diffusion is further reduced by using resonant optical pumping to maintain the NV– charge state. This approach allows for placement of NV centers with excellent optical coherence in a well-defined device layer, which is a crucial step in the development of diamond-based devices for quantum optics, nanophotonics, and quantum information science.
Citable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:33719345

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