Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
Liu, Alan Y.
Chow, Weng W.
Gossard, Arthur C.
Bowers, John E.
Lau, Kei May
MetadataShow full item record
CitationWan, Yating, Qiang Li, Alan Y. Liu, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau. 2016. “Sub-Wavelength InAs Quantum Dot Micro-Disk Lasers Epitaxially Grown on Exact Si (001) Substrates.” Applied Physics Letters 108 (22) (May 30): 221101. doi:10.1063/1.4952600.
AbstractSubwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:33983359
- FAS Scholarly Articles 
Contact administrator regarding this item (to report mistakes or request changes)