Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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Title: Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
Author: Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn; Lau, Kei May

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Citation: Wan, Yating, Qiang Li, Alan Y. Liu, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau. 2016. “Sub-Wavelength InAs Quantum Dot Micro-Disk Lasers Epitaxially Grown on Exact Si (001) Substrates.” Applied Physics Letters 108 (22) (May 30): 221101. doi:10.1063/1.4952600.
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Abstract: Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.
Published Version: doi:10.1063/1.4952600
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:33983359
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