Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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Author
Wan, Yating
Li, Qiang
Liu, Alan Y.
Chow, Weng W.
Gossard, Arthur C.
Bowers, John E.
Lau, Kei May
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https://doi.org/10.1063/1.4952600Metadata
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Wan, Yating, Qiang Li, Alan Y. Liu, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau. 2016. “Sub-Wavelength InAs Quantum Dot Micro-Disk Lasers Epitaxially Grown on Exact Si (001) Substrates.” Applied Physics Letters 108 (22) (May 30): 221101. doi:10.1063/1.4952600.Abstract
Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.Terms of Use
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