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dc.contributor.authorWan, Yating
dc.contributor.authorLi, Qiang
dc.contributor.authorLiu, Alan Y.
dc.contributor.authorChow, Weng W.
dc.contributor.authorGossard, Arthur C.
dc.contributor.authorBowers, John E.
dc.contributor.authorHu, Evelyn
dc.contributor.authorLau, Kei May
dc.date.accessioned2017-10-04T20:45:09Z
dc.date.issued2016
dc.identifier.citationWan, Yating, Qiang Li, Alan Y. Liu, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau. 2016. “Sub-Wavelength InAs Quantum Dot Micro-Disk Lasers Epitaxially Grown on Exact Si (001) Substrates.” Applied Physics Letters 108 (22) (May 30): 221101. doi:10.1063/1.4952600.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:33983359
dc.description.abstractSubwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofdoi:10.1063/1.4952600en_US
dash.licenseLAA
dc.titleSub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substratesen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorHu, Evelyn
dc.date.available2017-10-04T20:45:09Z
dc.identifier.doi10.1063/1.4952600*
workflow.legacycommentsFAR2016en_US
dash.contributor.affiliatedHu, Evelyn


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