Room-temperature single charge sensitivity in carbon nanotube field-effect transistors
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Room-temperature single charge sensitivity in carbon nanotube field-effect transistors
| Title: | Room-temperature single charge sensitivity in carbon nanotube field-effect transistors |
| Author: |
Peng, H. B.; Hughes, M. E.; Golovchenko, Jene Andrew
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Peng, H. B., M. E. Hughes, and J. A. Golovchenko. 2006. “Room-Temperature Single Charge Sensitivity in Carbon Nanotube Field-Effect Transistors.” Applied Physics Letters 89 (24) (December 11): 243502. doi:10.1063/1.2399942. http://dx.doi.org/10.1063/1.2399942. |
| Full Text & Related Files: |
Room-temperatureSingleChargeSensitivity.pdf (500.2Kb; PDF) 
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| Abstract: | Electrical current fluctuation studies are reported for coaxial pp-type and nn-type single-wall carbon nanotubefield-effect transistors(FETs). Abrupt discrete switching of the source-drain current is observed at room temperature. The authors attribute these random telegraph signals to charge fluctuating electron traps near the FET conduction channels. Evolution of the current-switching behavior associated with the occupancy of individual electron traps is demonstrated and analyzed statistically. The result strongly indicates room temperature single charge sensitivity in carbon nanotubeFETs, which may offer potential applications for single molecule sensors based on suitably prepared FETdevices. |
| Published Version: | doi:10.1063/1.2399942 |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:34334610 |
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