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dc.contributor.authorKang, Seok Ju
dc.contributor.authorLee, Gwan-Hyoung
dc.contributor.authorYu, Young-Jun
dc.contributor.authorZhao, Yue
dc.contributor.authorKim, Bumjung
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorHone, James
dc.contributor.authorKim, Philip
dc.contributor.authorNuckolls, Colin
dc.date.accessioned2018-01-05T17:17:48Z
dc.date.issued2014
dc.identifierQuick submit: 2015-08-14T15:10:30-04:00
dc.identifier.citationKang, Seok Ju, Gwan-Hyoung Lee, Young-Jun Yu, Yue Zhao, Bumjung Kim, Kenji Watanabe, Takashi Taniguchi, James Hone, Philip Kim, and Colin Nuckolls. 2014. “Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures.” Advanced Functional Materials 24 (32) (June 16): 5157–5163. doi:10.1002/adfm.201400348.en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:34604211
dc.description.abstractEnhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, charge traps, and foreign molecules at the interface. Here, a novel structure for high-performance rubrene OFETs is demonstrated that uses graphene and hexagonal boron nitride (hBN) as the contacting electrodes and gate dielectric layer, respectively. These hetero-stacked OFETs are fabricated by lithography-free dry-transfer method that allows the transfer of graphene and hBN on top of an organic single crystal, forming atomically sharp interfaces and efficient charge carrier-injection electrodes without damage or contamination. The resulting heterostructured OFETs exhibit both high mobility and low operating gate voltage, opening up new strategy to make high-performance OFETs and great potential for flexible electronics.en_US
dc.description.sponsorshipPhysicsen_US
dc.language.isoen_USen_US
dc.publisherWiley-Blackwellen_US
dc.relation.isversionofdoi:10.1002/adfm.201400348en_US
dash.licenseOAP
dc.subjectgrapheheen_US
dc.subjecthBNen_US
dc.subjectOFETen_US
dc.subjectrubreneen_US
dc.subjectCVDen_US
dc.titleOrganic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructuresen_US
dc.typeJournal Articleen_US
dc.date.updated2015-08-14T19:10:57Z
dc.description.versionVersion of Recorden_US
dc.rights.holderSeok Ju Kang, Gwan‐Hyoung Lee, Young‐Jun Yu, Yue Zhao, Bumjung Kim, Kenji Watanabe, Takashi Taniguchi, James Hone, Philip Kim, Colin Nuckolls
dc.relation.journalAdvanced Functional Materialsen_US
dash.depositing.authorKim, Philip
dc.date.available2018-01-05T17:17:48Z
dc.identifier.doi10.1002/adfm.201400348*
workflow.legacycommentsoap.needman (MM)en_US
dash.authorsorderedfalse
dash.contributor.affiliatedKim, Philip


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