Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model

 
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Author
Lee, Sang Woon
Heo, Jaeyeong
Published Version
https://doi.org/10.1039/c3nr03082b
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Citation
Lee, Sang Woon, Jaeyeong Heo, and Roy G. Gordon. 2013. “Origin of the Self-Limited Electron Densities at Al2O3/SrTiO3 Heterostructures Grown by Atomic Layer Deposition – Oxygen Diffusion Model.” Nanoscale 5 (19): 8940. doi:10.1039/c3nr03082b.
Abstract
Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al2O3/SrTiO3 (STO) heterostructures, in which the amorphous Al2O3 layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al2O3/STO heterostructures above the critical thickness of Al2O3 is explained by an oxygen diffusion mechanism.
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http://faculty.chemistry.harvard.edu/files/gordon/files/nanoscale_lee_2013.pdf
Citable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:34722202

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