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dc.contributor.authorLee, Sang Woon
dc.contributor.authorHeo, Jaeyeong
dc.contributor.authorGordon, Roy Gerald
dc.date.accessioned2018-01-23T19:18:00Z
dc.date.issued2013
dc.identifier.citationLee, Sang Woon, Jaeyeong Heo, and Roy G. Gordon. 2013. “Origin of the Self-Limited Electron Densities at Al2O3/SrTiO3 Heterostructures Grown by Atomic Layer Deposition – Oxygen Diffusion Model.” Nanoscale 5 (19): 8940. doi:10.1039/c3nr03082b.en_US
dc.identifier.issn2040-3364en_US
dc.identifier.issn2040-3372en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:34722202
dc.description.abstractRecently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al2O3/SrTiO3 (STO) heterostructures, in which the amorphous Al2O3 layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al2O3/STO heterostructures above the critical thickness of Al2O3 is explained by an oxygen diffusion mechanism.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.publisherRoyal Society of Chemistry (RSC)en_US
dc.relation.isversionofdoi:10.1039/c3nr03082ben_US
dc.relation.hasversionhttp://faculty.chemistry.harvard.edu/files/gordon/files/nanoscale_lee_2013.pdfen_US
dash.licenseMETA_ONLY
dc.titleOrigin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion modelen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalNanoscaleen_US
dash.depositing.authorGordon, Roy Gerald
dash.embargo.until10000-01-01
dc.identifier.doi10.1039/c3nr03082b*
workflow.legacycommentsFAR 2014 oap.needmanen_US
dash.contributor.affiliatedGordon, Roy


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