Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon
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Liu, Alan Y.
Gossard, Arthur C.
Bowers, John E.
Lau, Kei May
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CitationWan, Yating, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau. 2016. “Optically Pumped 1.3 μm room-temperature InAs Quantum-Dot Micro-Disk Lasers Directly Grown on (001) Silicon.” Optics Letters 41 (7) (April 1): 1664. doi:10.1364/ol.41.001664.
AbstractDirect integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut. The lasing threshold is as low as hundreds of microwatts, similar to the thresholds of identical lasers grown on a GaAs substrate. The heteroepitaxial structure employed here does not require the use of an absorptive germanium buffer and/or dislocation filter layers, both of which impede the efficient coupling of light from the laser active regions to silicon waveguides. This allows for full compatibility with the extensive silicon-on-insulator (SOI) technology. The large-area virtual GaAs (on Si) substrates can be directly adopted in various mature in-plane laser configurations, both optically and electrically. Thus, this demonstration represents a major advancement toward the commercial success of fully integrated silicon photonics.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:34744124
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