Direct Injection Tunnel Spectroscopy of a p-n Junction
Gossard, Arthur C.
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CitationLikovich, Edward M., Kasey J. Russell, Venkatesh Narayanamurti, Hong Lu, and Arthur C. Gossard. 2009. Direct injection tunnel spectroscopy of a p-n junction. Applied Physics Letters 95(2): 022106.
AbstractWe demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons. In contrast to the metal-base transistor design of conventional ballistic electron emission spectroscopy (BEES), the base layer of our device is comprised of a thin, heavily doped p-type region. By tunneling directly into the semiconductor, we observe a significant increase in collector current compared to conventional BEES measurements. This could enable the study of systems and processes that have thus far been difficult to probe with the low-electron collection efficiency of conventional BEES, such as luminescence from single-buried quantum dots.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3606234
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