Direct Injection Tunnel Spectroscopy of a p-n Junction

DSpace/Manakin Repository

Direct Injection Tunnel Spectroscopy of a p-n Junction

Citable link to this page


Title: Direct Injection Tunnel Spectroscopy of a p-n Junction
Author: Likovich, Edward Michael; Russell, Kasey Joe; Narayanamurti, Venkatesh; Lu, Hong; Gossard, Arthur C.

Note: Order does not necessarily reflect citation order of authors.

Citation: Likovich, Edward M., Kasey J. Russell, Venkatesh Narayanamurti, Hong Lu, and Arthur C. Gossard. 2009. Direct injection tunnel spectroscopy of a p-n junction. Applied Physics Letters 95(2): 022106.
Full Text & Related Files:
Abstract: We demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons. In contrast to the metal-base transistor design of conventional ballistic electron emission spectroscopy (BEES), the base layer of our device is comprised of a thin, heavily doped p-type region. By tunneling directly into the semiconductor, we observe a significant increase in collector current compared to conventional BEES measurements. This could enable the study of systems and processes that have thus far been difficult to probe with the low-electron collection efficiency of conventional BEES, such as luminescence from single-buried quantum dots.
Published Version: doi:10.1063/1.3177191
Other Sources:
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at
Citable link to this page:
Downloads of this work:

Show full Dublin Core record

This item appears in the following Collection(s)


Search DASH

Advanced Search