Weak Localization and Mobility in ZnO Nanostructures
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CitationLikovich, Edward M., Kasey J. Russell, Eric W. Petersen, and Venkatesh Narayanamurti. 2009. Weak localization and mobility in ZnO nanostructures. Physical Review B 80(24): 245318.
AbstractWe conduct a comprehensive investigation into the electronic and magnetotransport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid method. We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration. We measure phase coherence lengths of 50–100 nm at 1.9 K and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study. We then proceed to study the effect of weak localization on electron mobility using four-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration. We report an electron mobility of ∼100 cm2/V s at 275 K, comparable to what is observed in ZnO thin films. We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices. Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively charged Zn interstitial impurities.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3606239
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