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dc.contributor.authorAziz, Michael
dc.contributor.authorSabin, Paul C.
dc.contributor.authorLu, Guo-Quan
dc.date.accessioned2010-02-17T19:10:49Z
dc.date.issued1991
dc.identifier.citationAziz, Michael J., Paul C. Sabin, and Guo-Quan Lu. 1991. Effect of nonhydrostatic stress on crystal growth kinetics. Materials Research Society Symposia Proceedings 202, 567-572.en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3645197
dc.description.abstractThe effect of nonhydrostatic stresses on the solid phase epitaxial growth rate of crystalline Si(100) into self-implanted amorphous surface layers has been measured. Uniaxial stresses of up to 6 kbar (0.6 GPa) were attained by bending wafers over SiO2 rods and annealing at a temperature too low for plastic deformation to relieve the stress in the crystal, but high enough for solid phase epitaxial growth to proceed. The growth rate on the tensile side was greater than that on the compressive side of the wafer, in marked contrast to the enhancement observed from hydrostatic pressure. The phenomenology of an "activation strain", the nonhydrostatic analogue of the activation volume, has been developed to characterize the results. Combined with the measurement of the activation volume, the measurement reported here permits us to characterize to first order the entire activation strain tensor corresponding to the transition state for solid phase epitaxy of Si(100). We conclude that the transition state for this process is "short and fat"; that is, the fluctuation to the transition state involves an expansion in the two in-plane directions and a contraction in the direction normal to the surface large enough to make the overall volume change negative. The symmetry of the measured activation strain tensor is inconsistent with all bulk point defect mechanisms for solid phase epitaxy. The relevance of the activation strain formalism to heteroepitaxy and vapor phase epitaxy is discussed.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherMaterials Research Societyen_US
dc.relation.isversionofhttp://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980en_US
dash.licenseLAA
dc.titleEffect of Nonhydrostatic Stress on Crystal Growth Kineticsen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalMaterials Research Society Symposium Proceedingsen_US
dash.depositing.authorAziz, Michael
dc.date.available2010-02-17T19:10:49Z
dc.identifier.doi10.1557/PROC-202-567
dash.contributor.affiliatedAziz, Michael


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