Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanisms

DSpace/Manakin Repository

Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanisms

Citable link to this page

 

 
Title: Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanisms
Author: Aziz, Michael; Nygren, Eric; Lu, Guo-Quan

Note: Order does not necessarily reflect citation order of authors.

Citation: Lu, Guo-Quan, Eric Nygren and Michael J. Aziz. 1991. Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms. Journal of Applied Physics 70: 5323-5345.
Full Text & Related Files:
Abstract: The effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rate, v, of intrinsic Ge (100) and undoped and doped Si (100) into their respective
self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically-loaded fluid Ar,used as the pressure transmission medium, ensured a clean and hydrostatic
environment.
Published Version: http://dx.doi.org/10.1063/1.350243
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:3708235
Downloads of this work:

Show full Dublin Core record

This item appears in the following Collection(s)

 
 

Search DASH


Advanced Search
 
 

Submitters