Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanisms
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CitationLu, Guo-Quan, Eric Nygren and Michael J. Aziz. 1991. Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms. Journal of Applied Physics 70: 5323-5345.
AbstractThe effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rate, v, of intrinsic Ge (100) and undoped and doped Si (100) into their respective
self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically-loaded fluid Ar,used as the pressure transmission medium, ensured a clean and hydrostatic
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3708235
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