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dc.contributor.authorLu, Guo-Quan
dc.contributor.authorNygren, Eric
dc.contributor.authorAziz, Michael
dc.date.accessioned2010-02-25T20:51:06Z
dc.date.issued1991
dc.identifier.citationLu, Guo-Quan, Eric Nygren and Michael J. Aziz. 1991. Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms. Journal of Applied Physics 70: 5323-5345.en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3708235
dc.description.abstractThe effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rate, v, of intrinsic Ge (100) and undoped and doped Si (100) into their respective self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically-loaded fluid Ar,used as the pressure transmission medium, ensured a clean and hydrostatic environment.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.350243en
dash.licenseLAA
dc.titlePressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanismsen
dc.relation.journalJournal of Applied Physicsen
dash.depositing.authorAziz, Michael
dc.date.available2010-02-25T20:51:06Z
dc.identifier.doi10.1063/1.350243*
dash.contributor.affiliatedAziz, Michael


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