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dc.contributor.authorArnold, Craig B.
dc.contributor.authorAziz, Michael J.
dc.date.accessioned2010-03-02T19:27:16Z
dc.date.issued2005
dc.identifier.citationArnold, Craig B., and Michael J. Aziz. 2005. Unified kinetic model of dopant segregation during vapor-phase growth. Physical Review Series B 72, no. 19: 195419.en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3710662
dc.description.abstractWe develop a unified kinetic model for surface segregation during vapor phase growth that concisely and quantitatively describes the observed behavior in silicon-based systems. A simple analytic function for the segregation length is derived by treating terrace-mediated and step-edge-mediated mechanisms in parallel. The predicted behavior of this parameter is examined through its temperature, flux, and terrace length dependence. Six distinct temperature regimes are predicted for the segregation length that depend on the relative segregation energies and activation barriers of the two mechanisms. The model is compared to reported behavior of Sb and P in Si(001) and excellent agreement is obtained using realistic energies and preexponential factors. The model accounts for the experimentally observed anomalous low-temperature segregation of Sb as a consequence of the competition between step-edge-mediated segregation, dominant at low temperatures, and terrace-mediated segregation, dominant at higher temperatures. The generalized treatment of segregation mechanisms in the model makes it applicable to other segregating systems, including metals and III-V semiconductors.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.72.195419en_US
dash.licenseLAA
dc.titleUnified Kinetic Model of Dopant Segregation During Vapor-Phase Growthen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalPhysical Review Series Ben_US
dash.depositing.authorAziz, Michael J.
dc.date.available2010-03-02T19:27:16Z
dc.identifier.doi10.1103/PhysRevB.72.195419*
dash.contributor.affiliatedAziz, Michael


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