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dc.contributor.authorYi, Wei
dc.contributor.authorNarayanamurti, Venkatesh
dc.contributor.authorLu, Hong
dc.contributor.authorScarpulla, Michael A.
dc.contributor.authorGossard, Arthur C.
dc.contributor.authorHuang, Yong
dc.contributor.authorRyou, Jae-Hyun
dc.contributor.authorDupuis, Russell D.
dc.date.accessioned2018-12-19T15:44:29Z
dc.date.issued2009-09-14
dc.identifier.citationYi, Wei, Venkatesh Narayanamurti, Hong Lu, Michael A. Scarpulla, Arthur C. Gossard, Yong Huang, Jae-Hyun Ryou, and Russell D. Dupuis. 2009. “Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy.” Applied Physics Letters 95 (11): 112102. https://doi.org/10.1063/1.3224914.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issn1077-3118en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:37942011*
dc.description.abstractUtilizing ambipolar tunnel emission of ballistic electrons and holes, we have developed a model-independent method to self-consistently measure bandgaps of semiconductors and band offsets at semiconductor heterojunctions. Lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)(0.51)In0.49P(100) single-barrier heterostructures are studied at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/- 2%). For the heteroanion GaAs/AlGaInP (100) interface, this ratio varies with the Al composition and is distributed more in the valence band. The indirect-gap X band offsets observed at the GaAs/AlGaInP interface deviates from predictions by the transitivity rule.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAIP Publishingen_US
dc.relation.hasversionhttp://arxiv.org/pdf/0904.2364.pdfen_US
dash.licenseOAP
dc.titleBandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopyen_US
dc.typeJournal Articleen_US
dc.description.versionAuthor's Originalen_US
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorNarayanamurti, Venkatesh
dc.date.available2018-12-19T15:44:29Z
dash.affiliation.otherHarvard John A. Paulson School of Engineering and Applied Sciencesen_US
dash.workflow.comments1Science Serial ID 8533en_US
dc.identifier.doi10.1063/1.3224914
dc.source.journalAppl. Phys. Lett.
dash.source.volume95;11
dash.source.page112102
dash.contributor.affiliatedNarayanamurti, Venkatesh


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