| dc.contributor.author | Yi, Wei | |
| dc.contributor.author | Narayanamurti, Venkatesh | |
| dc.contributor.author | Lu, Hong | |
| dc.contributor.author | Scarpulla, Michael A. | |
| dc.contributor.author | Gossard, Arthur C. | |
| dc.contributor.author | Huang, Yong | |
| dc.contributor.author | Ryou, Jae-Hyun | |
| dc.contributor.author | Dupuis, Russell D. | |
| dc.date.accessioned | 2018-12-19T15:44:29Z | |
| dc.date.issued | 2009-09-14 | |
| dc.identifier.citation | Yi, Wei, Venkatesh Narayanamurti, Hong Lu, Michael A. Scarpulla, Arthur C. Gossard, Yong Huang, Jae-Hyun Ryou, and Russell D. Dupuis. 2009. “Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy.” Applied Physics Letters 95 (11): 112102. https://doi.org/10.1063/1.3224914. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.issn | 1077-3118 | en_US |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:37942011 | * |
| dc.description.abstract | Utilizing ambipolar tunnel emission of ballistic electrons and holes, we have developed a model-independent method to self-consistently measure bandgaps of semiconductors and band offsets at semiconductor heterojunctions. Lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)(0.51)In0.49P(100) single-barrier heterostructures are studied at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/- 2%). For the heteroanion GaAs/AlGaInP (100) interface, this ratio varies with the Al composition and is distributed more in the valence band. The indirect-gap X band offsets observed at the GaAs/AlGaInP interface deviates from predictions by the transitivity rule. | en_US |
| dc.description.sponsorship | Engineering and Applied Sciences | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | AIP Publishing | en_US |
| dc.relation.hasversion | http://arxiv.org/pdf/0904.2364.pdf | en_US |
| dash.license | OAP | |
| dc.title | Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy | en_US |
| dc.type | Journal Article | en_US |
| dc.description.version | Author's Original | en_US |
| dc.relation.journal | Applied Physics Letters | en_US |
| dash.depositing.author | Narayanamurti, Venkatesh | |
| dc.date.available | 2018-12-19T15:44:29Z | |
| dash.affiliation.other | Harvard John A. Paulson School of Engineering and Applied Sciences | en_US |
| dash.workflow.comments | 1Science Serial ID 8533 | en_US |
| dc.identifier.doi | 10.1063/1.3224914 | |
| dc.source.journal | Appl. Phys. Lett. | |
| dash.source.volume | 95;11 | |
| dash.source.page | 112102 | |
| dash.contributor.affiliated | Narayanamurti, Venkatesh | |
