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dc.contributor.authorKim, Sang Bok
dc.contributor.authorJayaraman, Ashwin
dc.contributor.authorChua, Danny
dc.contributor.authorDavis, Luke M.
dc.contributor.authorZheng, Shao-Liang
dc.contributor.authorZhao, Xizhu
dc.contributor.authorLee, Sunghwan
dc.contributor.authorGordon, Roy
dc.date.accessioned2019-03-04T16:06:53Z
dc.date.issued2018-06-05
dc.identifier.citationKim, Sang Bok, Ashwin Jayaraman, Danny Chua, Luke M. Davis, Shao‐Liang Zheng, Xizhu Zhao, Sunghwan Lee, and Roy G. Gordon. "Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In2O3 Films Using an InIII Amidinate and H2O." Chemistry – A European Journal 24, no. 38 (2018): 9525-529.en_US
dc.identifier.issn0947-6539en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:38561569*
dc.description.abstractIndium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In2O3 using water as a co‐precursor at substrate temperatures below 200 °C. Several alternative indium sources have been developed, but none allows ALD at lower temperatures except in the presence of oxidants such as O2 or O3, which are not compatible with some substrates or alloying processes. We have synthesized a new indium precursor, tris(N,N′‐diisopropylformamidinato)indium(III), compound 1, which allows ALD of pure, carbon‐free In2O3 films using H2O as the only co‐reactant, on substrates in the temperature range 150–275 °C. In contrast, replacing just the H of the anionic iPrNC(H)NiPr ligand with a methyl group (affording the known tris(N,N′‐diisopropylacetamidinato)indium(III), compound 2) results in a considerably higher and narrower ALD window in the analogous reaction with H2O (225–300 °C). Kinetic studies demonstrate that a higher rate of surface reactions in both parts of the ALD cycle gives rise to this difference in the ALD windows.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.publisherWileyen_US
dash.licenseMETA_ONLY
dc.subjectGeneral Chemistryen_US
dc.subjectamidinateen_US
dc.subjectatomic layer depositionen_US
dc.subjectindiumen_US
dc.subjectthin filmsen_US
dc.subjecttransparent conducting oxideen_US
dc.titleObtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In2O3 Films Using an InIII Amidinate and H2Oen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalChemistry – A European Journalen_US
dash.depositing.authorGordon, Roy
dc.date.available2019-03-04T16:06:53Z
dc.identifier.doi10.1002/chem.201802317
dc.source.journalChem. Eur. J.
dash.source.volume24;38
dash.source.page9525-9529
dash.contributor.affiliatedZheng, Shao-Liang
dash.contributor.affiliatedLee, Sunghwan
dash.contributor.affiliatedChua, Danny
dash.contributor.affiliatedJayaraman, Ashwin
dash.contributor.affiliatedGordon, Roy


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