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Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs 1– x P x Nanowires

dc.contributor.authorNylund, Gustav
dc.contributor.authorStorm, Kristian
dc.contributor.authorLehmann, Sebastian
dc.contributor.authorCapasso, Federico
dc.contributor.authorSamuelson, Lars
dc.date.accessioned2019-09-17T13:08:15Z
dc.date.issued2016
dc.identifier.citationNylund, Gustav, Kristian Storm, Sebastian Lehmann, Federico Capasso, and Lars Samuelson. 2016. “Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1–xPx Nanowires.” Nano Letters 16 (2): 1017–21. https://doi.org/10.1021/acs.nanolett.5b04067.
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41371322*
dc.language.isoen_US
dc.publisherAmerican Chemical Society
dash.licenseMETA_ONLY
dc.titleDesigned Quasi-1D Potential Structures Realized in Compositionally Graded InAs 1– x P x Nanowires
dc.typeJournal Article
dc.description.versionVersion of Record
dc.relation.journalNano Letters
dash.depositing.authorCapasso, Federico::c84ca12d0f20adc982c7c314bebd7c9e::600
dc.date.available2019-09-17T13:08:15Z
dash.workflow.comments1Science Serial ID 67691
dc.identifier.doi10.1021/acs.nanolett.5b04067
dash.source.volume16;2
dash.source.page1017-1021


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