Midinfrared electroluminescence in quantum cascade structures with InP/InGaAs active regions
Author
Troccoli, Mariano
Capasso, Federico
Chen, Jianxin
Peabody, Milton L.
Gmachl, Claire
Sivco, Deborah L.
Chen, Cheng-Hsuan
Cho, Alfred Y.
Published Version
https://doi.org/10.1063/1.1625090Metadata
Show full item recordCitation
Troccoli, Mariano, Federico Capasso, Jianxin Chen, Milton L. Peabody, Claire Gmachl, Deborah L. Sivco, Cheng-Hsuan Chen, and Alfred Y. Cho. 2003. “Midinfrared Electroluminescence in Quantum Cascade Structures with InP/InGaAs Active Regions.” Journal of Applied Physics 94 (11): 7101–4. https://doi.org/10.1063/1.1625090.Abstract
We report on the midinfrared emission from electroluminescent devices with quantum cascade active regions based on InGaAs/InP heterostructures. We observe emission at lambdasimilar to12 mum from two different structures and compare their emission characteristics based on the different band structure designs. Their relevance in view of the realization of InP-based quantum cascade lasers with aluminum-free waveguides is discussed.Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAACitable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:41371359
Collections
- FAS Scholarly Articles [17845]
Contact administrator regarding this item (to report mistakes or request changes)