Show simple item record

Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

dc.contributor.authorHuang, Yong
dc.contributor.authorRyou, Jae-Hyun
dc.contributor.authorDupuis, Russell D.
dc.contributor.authorPflügl, Christian
dc.contributor.authorCapasso, Federico
dc.contributor.authorSun, Kewei
dc.contributor.authorFischer, Alec M.
dc.contributor.authorPonce, Fernando A.
dc.date.accessioned2019-09-17T13:08:52Z
dc.date.issued2011
dc.identifier.citationHuang, Yong, Jae-Hyun Ryou, Russell D. Dupuis, Christian Pflügl, Federico Capasso, Kewei Sun, Alec M. Fischer, and Fernando A. Ponce. 2011. “Optimization of Growth Conditions for InGaAs/InAlAs/InP Quantum Cascade Lasers by Metalorganic Chemical Vapor Deposition.” Journal of Crystal Growth 316 (1): 75–80. https://doi.org/10.1016/j.jcrysgro.2010.12.028.
dc.identifier.issn0022-0248
dc.identifier.issn1873-5002
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41371370*
dc.language.isoen_US
dc.publisherElsevier
dash.licenseMETA_ONLY
dc.titleOptimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition
dc.typeJournal Article
dc.description.versionVersion of Record
dc.relation.journalJournal of Crystal Growth
dash.depositing.authorCapasso, Federico::c84ca12d0f20adc982c7c314bebd7c9e::600
dc.date.available2019-09-17T13:08:52Z
dash.workflow.comments1Science Serial ID 46051
dc.identifier.doi10.1016/j.jcrysgro.2010.12.028
dash.source.volume316;1
dash.source.page75-80


Files in this item

Thumbnail
Name:
46051 Huang_JCG_316_75_2010.pdf
Size:
1.551Mb
Format:
PDF
View/Open

This item appears in the following Collection(s)

Show simple item record