Electroluminescence from single nanowires by tunnel injection: an experimental study
Zimmler, Mariano A.
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CitationZimmler, Mariano A, Jiming Bao, Ilan Shalish, Wei Yi, Joonah Yoon, Venkatesh Narayanamurti, and Federico Capasso. 2007. “Electroluminescence from Single Nanowires by Tunnel Injection: An Experimental Study.” Nanotechnology 18 (23): 235205. https://doi.org/10.1088/0957-4484/18/23/235205.
AbstractWe present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate ( under forward bias) and from the metal ( under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41371547
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