dc.contributor.author | Hummon, M. R. | |
dc.contributor.author | Stollenwerk, A. J. | |
dc.contributor.author | Narayanamurti, V. | |
dc.contributor.author | Anikeeva, P. O. | |
dc.contributor.author | Panzer, M. J. | |
dc.contributor.author | Wood, V. | |
dc.contributor.author | Bulović, V. | |
dc.date.accessioned | 2019-09-26T15:01:49Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Hummon, M. R., A. J. Stollenwerk, V. Narayanamurti, P. O. Anikeeva, M. J. Panzer, V. Wood, and V. Bulović. 2010. “Measuring Charge Trap Occupation and Energy Level in CdSe/ZnS Quantum Dots Using a Scanning Tunneling Microscope.” Physical Review B 81 (11). https://doi.org/10.1103/physrevb.81.115439. | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:41412215 | * |
dc.description.abstract | We use a scanning tunneling microscope to probe single-electron charging phenomena in individual CdSe/ZnS (core/shell) quantum dots (QDs) at room temperature. The QDs are deposited on top of a bare Au thin film and form a double-barrier tunnel junction (DBTJ) between the tip, QD, and substrate. Analysis of room-temperature hysteresis in the current-voltage (IV) tunneling spectra, is consistent with trapped charge(s) presenting an additional potential barrier to tunneling, a measure of the Coulomb blockade. The paper describes the first direct electrical measurement of the trap-state energy on individual QDs. Manipulation of the charge occupation of the QD, verified by measuring the charging energy, (61.4 +/- 2.4) meV, and analysis of the DBTJ, show trap states similar to 1.09 eV below the QD conduction-band edge. In addition, the detrapping time, a measure of the tunneling barrier thickness, is determined to have an upper time limit of 250 ms. We hypothesize that the charge is trapped in a quantum-dot surface state. | |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | |
dash.license | LAA | |
dc.title | Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope | |
dc.type | Journal Article | |
dc.description.version | Version of Record | |
dc.relation.journal | Physical Review B - Condensed Matter and Materials Physics | |
dash.depositing.author | Narayanamurti, Venkatesh::a1129c27269f100f3b0beb8dd77ae6d2::600 | |
dc.date.available | 2019-09-26T15:01:49Z | |
dash.workflow.comments | 1Science Serial ID 76525 | |
dc.identifier.doi | 10.1103/PhysRevB.81.115439 | |
dash.source.volume | 81;11 | |