Radiation-induced oscillatory Hall effect in high-mobility G a a s / A l x Ga 1 − x as devices

 
Thumbnail
View/Open
Author
Mani, R. G.
Narayanamurti, V.
von Klitzing, K.
Smet, J. H.
Johnson, W. B.
Umansky, V.
Published Version
https://doi.org/10.1103/PhysRevB.69.161306
Metadata
Show full item record
Citation
Mani, R. G., V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, and V. Umansky. 2004. “Radiation-Induced Oscillatory Hall Effect in High-mobilityGaAs/AlxGa1−xAsdevices.” Physical Review B 69 (16). https://doi.org/10.1103/physrevb.69.161306.
Abstract
We examine the radiation induced modification of the Hall effect in high-mobility GaAs/AlxGa1-xAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance R-xy that correlates with an increase in the diagonal resistance R-xx, and
Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:41417234

Collections