Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition
Claflin, Bruce B.
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CitationRuzmetov, Dmitry, Don Heiman, Bruce B. Claflin, Venkatesh Narayanamurti, and Shriram Ramanathan. 2009. “Hall Carrier Density and Magnetoresistance Measurements in Thin-Film Vanadium Dioxide across the Metal-Insulator Transition.” Physical Review B 79 (15). https://doi.org/10.1103/physrevb.79.153107.
AbstractTemperature-dependent magnetotransport measurements in magnetic fields of up to 12 T were performed on thin-film vanadium dioxide (VO(2)) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, similar to 0.1 cm(2)/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41417252
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