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dc.contributor.authorAkhlaghi, Mohsen K.
dc.contributor.authorAtikian, Haig
dc.contributor.authorEftekharian, Amin
dc.contributor.authorLoncar, Marko
dc.contributor.authorMajedi, A. Hamed
dc.date.accessioned2019-10-03T14:39:16Z
dc.date.issued2012
dc.identifier.citationAkhlaghi, Mohsen K., Haig Atikian, Amin Eftekharian, Marko Loncar, and A. Hamed Majedi. 2012. “Reduced Dark Counts in Optimized Geometries for Superconducting Nanowire Single Photon Detectors.” Optics Express 20 (21): 23610. https://doi.org/10.1364/oe.20.023610.
dc.identifier.issn1094-4087
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41461261*
dc.description.abstractWe have experimentally compared the critical current, dark count rate and photo-response of 100nm wide superconducting nanowires with different bend designs. Enhanced critical current for nanowires with optimally rounded bends, and thus with no current crowding, are observed. Furthermore, we find that the optimally designed bend significantly reduces the dark counts without compromising the photo-response of the device. The results can lead to major improvements in superconducting nanowire single photon detectors.
dc.language.isoen_US
dc.publisherOptical Society of America
dash.licenseLAA
dc.titleReduced dark counts in optimized geometries for superconducting nanowire single photon detectors
dc.typeJournal Article
dc.description.versionVersion of Record
dc.relation.journalOptics Express
dash.depositing.authorLoncar, Marko::2bc6c4f9129dbb92c0c79b3f631c0068::600
dc.date.available2019-10-03T14:39:16Z
dash.workflow.comments1Science Serial ID 70301
dc.identifier.doi10.1364/OE.20.023610
dash.source.volume20;21
dash.source.page23610


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