Show simple item record

dc.contributor.authorTheiss, Steven D.
dc.contributor.authorSpaepen, Frans
dc.contributor.authorAziz, Michael J.
dc.date.accessioned2019-10-09T13:57:04Z
dc.date.issued1996
dc.identifier.citationTheiss, Steven D., Frans Spaepen, and Michael J. Aziz. 1996. “Pressure‐enhanced Interdiffusion in Amorphous Si/Ge Multilayers.” Applied Physics Letters68 (9): 1226–28. https://doi.org/10.1063/1.115934.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issn1520-8842
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:41511301*
dc.language.isoen_US
dc.publisherAIP Publishing
dash.licenseLAA
dc.titlePressure‐enhanced interdiffusion in amorphous Si/Ge multilayers
dc.typeJournal Article
dc.description.versionVersion of Record
dc.relation.journalApplied Physics Letters
dash.depositing.authorSpaepen, Frans A.::7485bd1db37d131a5c47f3d9c4fc07ac::600
dc.date.available2019-10-09T13:57:04Z
dash.workflow.comments1Science Serial ID 8440
dc.identifier.doi10.1063/1.115934
dash.source.volume68;9
dash.source.page1226-1228


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record