Pressure‐enhanced interdiffusion in amorphous Si/Ge multilayers

dc.contributor.author	Theiss, Steven D.
dc.contributor.author	Spaepen, Frans
dc.contributor.author	Aziz, Michael J.
dc.date.accessioned	2019-10-09T13:57:04Z
dc.date.issued	1996
dc.identifier.citation	Theiss, Steven D., Frans Spaepen, and Michael J. Aziz. 1996. “Pressure‐enhanced Interdiffusion in Amorphous Si/Ge Multilayers.” Applied Physics Letters68 (9): 1226–28. https://doi.org/10.1063/1.115934.
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.issn	1520-8842
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:41511301	*
dc.language.iso	en_US
dc.publisher	AIP Publishing
dash.license	LAA
dc.title	Pressure‐enhanced interdiffusion in amorphous Si/Ge multilayers
dc.type	Journal Article
dc.description.version	Version of Record
dc.relation.journal	Applied Physics Letters
dash.depositing.author	Spaepen, Frans A.::7485bd1db37d131a5c47f3d9c4fc07ac::600
dc.date.available	2019-10-09T13:57:04Z
dash.workflow.comments	1Science Serial ID 8440
dc.identifier.doi	10.1063/1.115934
dash.source.volume	68;9
dash.source.page	1226-1228