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dc.contributor.authorRashba, Emmanuel
dc.contributor.authorTolpygo, K. B.
dc.date.accessioned2020-04-08T16:55:10Z
dc.date.issued1957
dc.identifierQuick submit: 2016-04-06T19:20:52-0400
dc.identifier.citationTolpygo, K. B., and E. I. Rashba. "Bipolar Diffusion of Current Carriers in the Presence of Deep Traps." Soviet Physics JETP-USSR 4, no. 2 (1957): 213-216.en_US
dc.identifier.issn1063-7761en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:42658687*
dc.description.abstractWe have investigated bipolar diffusion in the presence of traps, taking into consideration the dependence of minority carrier lifetime on the population of the traps, and have established criteria for the validity of the linear recombination law. An equation was derived for the concentration distribution of minority carriers which obey a nonlinear recombination lawen_US
dc.description.sponsorshipPhysicsen_US
dc.language.isoen_USen_US
dash.licenseMETA_ONLY
dc.titleBipolar Diffusion of Current Carriers in the Presence of Deep Trapsen_US
dc.typeJournal Articleen_US
dc.date.updated2016-04-06T23:20:56Z
dc.description.versionVersion of Recorden_US
dc.relation.journalJournal of Experimental and Theoretical Physicsen_US
dash.depositing.authorRashba, Emmanuel
dc.date.available1957
dc.date.available2020-04-08T16:55:10Z
dash.contributor.affiliatedRashba, Emmanuel


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