On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon
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CitationRecht, Daniel, Federico Capasso, and Michael J. Aziz. 2009. On the temperature dependence of point-defect-mediated luminescence in silicon. Applied Physics Letters 94(25): 251113.
AbstractWe present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.
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