Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

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Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

Show simple item record Likovich, Edward Michael Russell, Kasey Joe Yi, Wei Narayanamurti, Venkatesh Ku, Keh-Chiang Zhu, Meng Samarth, Nitin 2011-02-16T15:28:15Z 2009
dc.identifier.citation Likovich, Edward M., Kasey J. Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth. 2009. Magnetoresistance in an asymmetric GaMnAs resonant tunneling diode. Physical Review B 80(20): 201307. en_US
dc.identifier.issn 1098-0121 en_US
dc.description.abstract In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with recent predictions from a theoretical analysis of a similar n-type structure by Ertler and Fabian, and our results suggest that further investigation into ferromagnetic RTD structures may result in significantly enhanced magnetoresistance. en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher American Physical Society en_US
dc.relation.isversionof doi:10.1103/PhysRevB.80.201307 en_US
dc.relation.hasversion en_US
dash.license OAP
dc.title Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Physical Review B en_US Narayanamurti, Venkatesh 2011-02-16T15:28:15Z

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