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dc.contributor.authorZimmler, Mariano
dc.contributor.authorVoss, Tobias
dc.contributor.authorRonning, Carsten
dc.contributor.authorCapasso, Federico
dc.date.accessioned2011-08-03T15:36:50Z
dc.date.issued2009
dc.identifier.citationZimmler, Mariano A., Tobias Voss, Carsten Ronning, and Federico Capasso. 2009. Exciton-related electroluminescence from ZnO nanowire light-emitting diodes. Applied Physics Letters 94(24): 241120.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:5096631
dc.description.abstractThe authors study the microscopic origin of the electroluminescence from zinc oxide (ZnO) nanowire light-emitting diodes (LEDs) fabricated on a heavily doped p-type silicon (p-Si) substrate. By comparing the low-temperature photoluminescence and electroluminescence of a single nanowire LED, bound- and free-exciton related recombination processes, together with their longitudinal-optical phonon replicas, can be identified as the origin of both electroluminescence and photoluminescence.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3157274en_US
dash.licenseLAA
dc.titleExciton-Related Electroluminescence from ZnO Nanowire Light-Emitting Diodesen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorCapasso, Federico
dc.date.available2011-08-03T15:36:50Z
dc.identifier.doi10.1063/1.3157274*
dash.contributor.affiliatedCapasso, Federico


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