Precision Cutting and Patterning of Graphene with Helium Ions

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Precision Cutting and Patterning of Graphene with Helium Ions

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Title: Precision Cutting and Patterning of Graphene with Helium Ions
Author: Bell, David C.; Lemme, Max; Stern, L. A.; Williams, J. R.; Marcus, Charles Masamed

Note: Order does not necessarily reflect citation order of authors.

Citation: Bell, David C., Max Lemme, L. A. Stern, J. R. Williams, and Charles M. Marcus. 2009. Precision cutting and patterning of graphene with helium ions. Nanotechnology 20(455301).
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Abstract: We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on \(Si/SiO_2\) substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with ~15 nm feature sizes.
Published Version: doi:10.1088/0957-4484/20/45/455301
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:5110750
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