Etching of Graphene Devices with a Helium Ion Beam

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Etching of Graphene Devices with a Helium Ion Beam

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Title: Etching of Graphene Devices with a Helium Ion Beam
Author: Lemme, Max C.; Bell, David C.; Williams, James R.; Stern, Lewis A.; Baugher, Britton W. H.; Jarillo-Herrero, Pablo; Marcus, Charles Masamed

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Citation: Lemme, Max C., David C. Bell, James R. Williams, Lewis A. Stern, Britton W. H. Baugher, Pablo Jarillo-Herrero, and Charles Masamed Marcus. 2009. Etching of graphene devices with a helium ion beam. ACS Nano 3(9): 2674-2676.
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Abstract: We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide \((SiO_2)\) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Published Version: doi:10.1021/nn900744z
Other Sources: http://arxiv.org/abs/0905.4409
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:5110761
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