Etching of Graphene Devices with a Helium Ion Beam
Lemme, Max C.
Williams, James R.
Stern, Lewis A.
Baugher, Britton W. H.
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CitationLemme, Max C., David C. Bell, James R. Williams, Lewis A. Stern, Britton W. H. Baugher, Pablo Jarillo-Herrero, and Charles Masamed Marcus. 2009. Etching of graphene devices with a helium ion beam. ACS Nano 3(9): 2674-2676.
AbstractWe report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide \((SiO_2)\) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:5110761
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