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dc.contributor.authorSinsermsuksakul, Prasert
dc.contributor.authorHeo, Jae Yeong
dc.contributor.authorNoh, Wontae
dc.contributor.authorHock, Adam S.
dc.contributor.authorGordon, Roy Gerald
dc.date.accessioned2011-12-09T18:18:35Z
dc.date.issued2011
dc.identifier.citationSinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125.en_US
dc.identifier.issn1614-6832en_US
dc.identifier.issn1614-6840en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599
dc.description.abstractThin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (\(SnS\)). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of \(bis(N,N′-diisopropylacetamidinato)tin(II)\) \([Sn(MeC(N-^{i}Pr)_{2})_{2}]\) and hydrogen sulfide \((H_2 S)\) at low temperatures (100 to 200 \(°C\)). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption \((\alpha > 10^4 cm^{−1})\) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of \(10^{16} cm^{−3}\) and hole mobility \(0.82–15.3cm^{2}V^{−1}s^{−1}\) in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.publisherWiley-VCHen_US
dc.relation.isversionofdoi:10.1002/aenm.201100330en_US
dash.licenseOAP
dc.subjectatomic layer depositionen_US
dc.subjectelectro-optical materialsen_US
dc.subjectphotovoltaic materialsen_US
dc.subjectthin filmsen_US
dc.titleAtomic Layer Deposition of Tin Monosulfide Thin Filmsen_US
dc.typeJournal Articleen_US
dc.description.versionAccepted Manuscripten_US
dc.relation.journalAdvanced Energy Materialsen_US
dash.depositing.authorGordon, Roy Gerald
dc.date.available2011-12-09T18:18:35Z
dc.identifier.doi10.1002/aenm.201100330*
dash.contributor.affiliatedHeo, Jae Yeong
dash.contributor.affiliatedSinsermsuksakul, Prasert
dash.contributor.affiliatedGordon, Roy


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