Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence
Likovich, Edward M.
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CitationLikovich, Edward M., Rafael Jaramillo, Kasey J. Russell, Shriram Ramanathan, and Venkatesch Narayanamurti. 2011. Narrow band defect luminescence from AI-doped ZnO probed by scanning tunneling cathodoluminescence. Applied Physics Letters 99(15): 151910.
AbstractWe present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:5371009
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