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dc.contributor.authorLikovich, Edward M.
dc.contributor.authorJaramillo, Rafael
dc.contributor.authorRussell, Kasey Joe
dc.contributor.authorRamanathan, Shriram
dc.contributor.authorNarayanamurti, Venkatesh
dc.date.accessioned2011-12-12T19:45:27Z
dc.date.issued2011
dc.identifier.citationLikovich, Edward M., Rafael Jaramillo, Kasey J. Russell, Shriram Ramanathan, and Venkatesch Narayanamurti. 2011. Narrow band defect luminescence from AI-doped ZnO probed by scanning tunneling cathodoluminescence. Applied Physics Letters 99(15): 151910.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issn1077-3118en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:5371009
dc.description.abstractWe present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofdoi:10.1063/1.3647622en_US
dash.licenseOAP
dc.subjectaluminiumen_US
dc.subjectcathodoluminescenceen_US
dc.subjectdefect statesen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectphotoluminescenceen_US
dc.subjectscanning tunnelling microscopyen_US
dc.subjectsemiconductor thin filmsen_US
dc.subjectsputter depositionen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titleNarrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescenceen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorNarayanamurti, Venkatesh
dc.date.available2011-12-12T19:45:27Z
dc.identifier.doi10.1063/1.3647622*
dash.contributor.affiliatedJaramillo, Rafael
dash.contributor.affiliatedRussell, Kasey
dash.contributor.affiliatedRamanathan, Shriram
dash.contributor.affiliatedNarayanamurti, Venkatesh


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