\((Sn,Al)O_x\) Films Grown by Atomic Layer Deposition

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\((Sn,Al)O_x\) Films Grown by Atomic Layer Deposition

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Title: \((Sn,Al)O_x\) Films Grown by Atomic Layer Deposition
Author: Heo, Jae Yeong; Liu, Yiqun; Li, Zhefeng; Sinsermsuksakul, Prasert; Sun, Leizhi; Noh, Wontae; Gordon, Roy Gerald

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Citation: Heo, Jae Yeong, Yiqun Liu, Prasert Sinsermsuksakul, Zhefeng Li, Leizhi Sun, Wontae Noh, and Roy Gerald Gordon. 2011. \((Sn,Al)O_x\) films grown by atomic layer deposition. Journal of Physical Chemistry C 115(20): 10277–10283.
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Abstract: \((Sn,Al)O_x\) composite films with various aluminum (Al) to tin (Sn) ratios were deposited using an atomic layer deposition technique. The chemisorption behavior of cyclic amide of tin(II) and trimethylaluminum were analyzed by Rutherford backscattering spectroscopy. Both precursors showed retarded and enhanced chemisorption on \(Al_2O_3\) and \(SnO_2\) surfaces, respectively. The films show highly anisotropic electrical conductivity, i.e., much higher resistivity in the direction through the film than parallel to the surface of the film. The cause of the anisotropy was investigated by cross-sectional transmission electron microscopy, which showed a nanolaminate structure of crystalline \(SnO_2\) grains separated by thin, amorphous \(Al_2O_3\) monolayers. When the Al concentration was higher than \( \sim 35\) atom percent, the composite films became amorphous, and the vertical and lateral direction resistivity values converged toward one value. By properly choosing the ratio of \(SnO_2\) and \(Al_2O_3\) subcycles, controlled adjustment of film electrical resistivity over more than 15 orders of magnitude was successfully demonstrated.
Published Version: doi:10.1021/jp202202x
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:8886764
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