Single-Color Centers Implanted in Diamond Nanostructures
Hodges, Jonathan S.
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CitationHausmann, Birgit J. M., Thomas M. Babinec, Jennifer T. Choy, Jonathan S. Hodges, Sungkun Hong, Irfan Bulu, Amir Yacoby, Mikhail D. Lukin, and Marko Lončar. 2011. Single-color centers implanted in diamond nanostructures. New Journal of Physics 13(4): 045004.
AbstractThe development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (similar to 20 nm) to generate nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal prior to device fabrication. Individual NV centers are then mechanically isolated by etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (> 10%) of the devices contain a single NV center. The second device demonstrates 'deep' (similar to \(1 \mu m\)) implantation of individual NV centers into diamond nanowires as a post-processing step. The high single-photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allowed us to observe sustained photon anti-bunching even at high pump powers.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:8951179
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