Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
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dc.contributor.author |
Wang, Hongtao |
|
dc.contributor.author |
Wang, Jun-Jieh |
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dc.contributor.author |
Gordon, Roy Gerald
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dc.contributor.author |
Lehn, Jean-Sébastien M. |
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dc.contributor.author |
Li, Huazhi |
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dc.contributor.author |
Hong, Daewon |
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dc.contributor.author |
Shenai, Deo V. |
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dc.date.accessioned |
2012-07-30T01:58:16Z |
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dc.date.issued |
2009 |
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dc.identifier.citation |
Wang, Hongtao, Jun-Jieh Wang, Roy Gerald Gordon, Jean-Sébastien M. Lehn, Huazhi Li, Daewon Hong, and Deo V. Shenai. 2009. Atomic layer deposition of lanthanum-based ternary oxides. Electrochemical and Solid-State Letters 12(4): G13-G15. |
en_US |
dc.identifier.issn |
1099-0062 |
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dc.identifier.issn |
1944-8775 |
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dc.identifier.uri |
http://nrs.harvard.edu/urn-3:HUL.InstRepos:9310888 |
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dc.description.abstract |
Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited \(La_xY_{2−x}O_3\) films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for \(LaScO_3\), \(LaLuO_3\), and \(La_{1.23}Y_{0.77}O_3\) films are \(\sim 23\), \(28 \pm 1\), and \(17 \pm 1.3\), respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal \(SiO_2\) with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio \(\sim 80:1\). |
en_US |
dc.description.sponsorship |
Chemistry and Chemical Biology |
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dc.language.iso |
en_US |
en_US |
dc.publisher |
Electrochemical Society |
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dc.relation.isversionof |
doi:10.1149/1.3074314 |
en_US |
dash.license |
LAA |
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dc.subject |
amorphous state |
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dc.subject |
atomic layer deposition |
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dc.subject |
dielectric thin films |
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dc.subject |
lanthanum compounds |
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dc.subject |
leakage currents |
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dc.subject |
permittivity |
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dc.subject |
Poole-Frenkel effect |
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dc.subject |
transmission electron microscopy |
en_US |
dc.title |
Atomic Layer Deposition of Lanthanum-Based Ternary Oxides |
en_US |
dc.type |
Journal Article |
en_US |
dc.description.version |
Version of Record |
en_US |
dc.relation.journal |
Electrochemical and Solid-State Letters |
en_US |
dash.depositing.author |
Gordon, Roy Gerald
|
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dc.date.available |
2012-07-30T01:58:16Z |
|
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