Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

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Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

dc.contributor.author	Wang, Hongtao
dc.contributor.author	Wang, Jun-Jieh
dc.contributor.author	Gordon, Roy Gerald
dc.contributor.author	Lehn, Jean-Sébastien M.
dc.contributor.author	Li, Huazhi
dc.contributor.author	Hong, Daewon
dc.contributor.author	Shenai, Deo V.
dc.date.accessioned	2012-07-30T01:58:16Z
dc.date.issued	2009
dc.identifier.citation	Wang, Hongtao, Jun-Jieh Wang, Roy Gerald Gordon, Jean-Sébastien M. Lehn, Huazhi Li, Daewon Hong, and Deo V. Shenai. 2009. Atomic layer deposition of lanthanum-based ternary oxides. Electrochemical and Solid-State Letters 12(4): G13-G15.	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.issn	1944-8775	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:9310888
dc.description.abstract	Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited \(La_xY_{2−x}O_3\) films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for \(LaScO_3\), \(LaLuO_3\), and \(La_{1.23}Y_{0.77}O_3\) ﬁlms are \(\sim 23\), \(28 \pm 1\), and \(17 \pm 1.3\), respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal \(SiO_2\) with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio \(\sim 80:1\).	en_US
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.language.iso	en_US	en_US
dc.publisher	Electrochemical Society	en_US
dc.relation.isversionof	doi:10.1149/1.3074314	en_US
dash.license	LAA
dc.subject	amorphous state	en_US
dc.subject	atomic layer deposition	en_US
dc.subject	dielectric thin films	en_US
dc.subject	lanthanum compounds	en_US
dc.subject	leakage currents	en_US
dc.subject	permittivity	en_US
dc.subject	Poole-Frenkel effect	en_US
dc.subject	transmission electron microscopy	en_US
dc.title	Atomic Layer Deposition of Lanthanum-Based Ternary Oxides	en_US
dc.type	Journal Article	en_US
dc.description.version	Version of Record	en_US
dc.relation.journal	Electrochemical and Solid-State Letters	en_US
dash.depositing.author	Gordon, Roy Gerald
dc.date.available	2012-07-30T01:58:16Z