Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication

View/Open

Au_ALDCVD.pdf (3.784Mb)

Author

Au, Yeung Billy

Lin, Youbo

Kim, Hoon

Li, Zhengwen

Gordon, Roy Gerald

Metadata

Show full item record

Citation

Au, Yeung, Youbo Lin, Hoon Kim, Zhengwen Li, and Roy G. Gordon. 2011. Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-based Metallization for Microelectronic Fabrication. Paper presented at The 11th International Conference on Atomic Layer Deposition, Cambridge, MA, June 26-29, 2011.

Terms of Use

This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA

Citable link to this page

http://nrs.harvard.edu/urn-3:HUL.InstRepos:9639958