Barvosa-Carter, W.Bracker, A. S.Culbertson, J. C.Nosho, B. Z.Shanabrook, B. V.Whitman, L. J.Kim, HanchulModine, N. A.Kaxiras, E.2019-09-202000Barvosa-Carter, W., A. S. Bracker, J. C. Culbertson, B. Z. Nosho, B. V. Shanabrook, L. J. Whitman, Hanchul Kim, N. A. Modine, and E. Kaxiras. 2000. “Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers.” Physical Review Letters 84 (20): 4649–52. https://doi.org/10.1103/physrevlett.84.4649.0031-90071079-71141092-0145http://nrs.harvard.edu/urn-3:HUL.InstRepos:41384111We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1 x 3), we find that there are actually three distinct, stable (4 x 3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth.en-USJournal Article2019-09-2010.1103/PhysRevLett.84.4649